High-frequency performance of self-aligned gate-last surface channel In 0.53Ga 0.47as MOSFET

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 369-371

  Egard, Mikael ^a   Ohlsson, Lars ^a   Ärlelid, Mats ^a   Persson, Karl Magnus ^a   Borg, B Mattias ^a   Lenrick, Filip ^a   Wallenberg, Reine ^a   Lind, Erik ^a   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

Gate last; InGaAs; metal organic chemical vapor deposition (MOCVD) regrowth; MOSFET; self aligned; surface channel

Indexed keywords

GATE-LAST; INGAAS; MOSFET; SELF-ALIGNED; SURFACE CHANNEL;

FREQUENCY RESPONSE; GALLIUM; IMPACT IONIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS DEVICES;

MOSFET DEVICES;

EID: 84857453827     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2181323     Document Type: Article

References (11)

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