A self-aligned InGaAs quantum-well metal-oxide-semiconductor field-effect transistor fabricated through a lift-off-free front-end process

Applied Physics Express

Volumn 5, Issue 6, 2012, Pages

  Lin, Jianqiang ^a   Kim, Tae Woo ^a   Antoniadis, Dimitri A ^a   Del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; CURRENT DRIVES; DEVICE STRUCTURES; FRONT-END PROCESS; GATE-LAST; INP; INTERFACIAL CHARACTERISTICS; INTRINSIC DEVICE; MANUFACTURING ISSUE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; MOSFETS; PEAK MOBILITY; SELF-ALIGNED; SUBTHRESHOLD SWING; THERMAL-ANNEALING;

OHMIC CONTACTS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

MOSFET DEVICES;

EID: 84862575898     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.064002     Document Type: Article

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