0.3-μm gate-length enhancement-mode InAlAs/InGaAs/InP high-electron mobility transistor

IEEE Electron Device Letters

Volumn 18, Issue 6, 1997, Pages 284-286

  Mahajan, A ^b   Arafa, M ^b   Fay, P ^b   Caneau, C ^c   Adesida, I ^a,b  

^a IEEE

^b United States of America   (United States)

^c TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRIC CURRENTS; GATES (TRANSISTOR); HETEROJUNCTIONS; NATURAL FREQUENCIES; OSCILLATIONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

CUTOFF FREQUENCIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031162312     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.585360     Document Type: Article

References (9)

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