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IEEE Electron Device Letters

Volumn 22, Issue 8, 2001, Pages 361-363

300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV CEO ≥ 6 V

(4) Dvorak, M W a,b Bolognesi, C R a,b Pitts, O J b Watkins, S P a,b

a IEEE (Canada)

b SIMON FRASER UNIVERSITY (Canada)

Author keywords

HBTs; Semiconductor heterojunctions

Indexed keywords

CONDUCTION BANDS; CURRENT BLOCKING;

BAND STRUCTURE; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035424227 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/55.936343 Document Type: Article

Times cited : (183)

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