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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 4, 2009, Pages 2024-2027

In 0.53 Ga 0.47 As n -metal-oxide-semiconductor field effect transistors with atomic layer deposited Al 2 O 3, HfO 2, and LaAlO 3 gate dielectrics

(4) Zhao, Han a Yum, Jung Hwan a Chen, Yen Ting a Lee, Jack C a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CURRENT DRIVING; DEVICE PERFORMANCE; DIELECTRIC CONSTANTS; EQUIVALENT OXIDE THICKNESS; HIGH DRIVE CURRENT; INTERFACE QUALITY; LOW DIELECTRIC CONSTANTS; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; SUBTHRESHOLD SWING;

ALUMINUM; ATOMS; CERAMIC CAPACITORS; DIELECTRIC MATERIALS; DIELECTRIC WAVEGUIDES; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LANTHANUM ALLOYS; MOS CAPACITORS; PERMITTIVITY;

FIELD EFFECT TRANSISTORS;

EID: 68349127554 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3125284 Document Type: Article

Times cited : (28)

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