Metamorphic 50 nm InAs-channel HEMT

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 129-132

  Leuther, Arnulf ^a   Weber, Rainer ^a   Dammann, Michael ^a   Schlechtweg, Michael ^a   Mikulla, Michael ^a   Walther, Martin ^a   Weimann, Günter ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTROMAGNETIC DISPERSION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SIGNAL SYSTEMS;

INALAS-BARRIERS; ON-STATE BREAKDOWN VOLTAGE; POWER DISSIPATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33747444607     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517436     Document Type: Conference Paper

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