Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

Applied Physics Letters

Volumn 104, Issue 16, 2014, Pages

  Koh, D ^a,b   Kwon, H M ^c   Kim, T W ^b   Kim, D H ^b,d   Hudnall, Todd W ^e   Bielawski, Christopher W ^a   Maszara, W ^d   Veksler, D ^b   Gilmer, D ^b   Kirsch, P D ^b   Banerjee, S K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b SEMATECH   (United States)

^c Chungnam National University   (South Korea)

^d IBM MICROELECTRONICS   (United States)

^e Texas State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; BERYLLIA; GALLIUM; GATE DIELECTRICS; PASSIVATION; SEMICONDUCTOR QUANTUM WELLS;

ATOMIC LAYER DEPOSITED; EFFECTIVE OXIDE THICKNESS; ELECTRICAL CHARACTERISTIC; GATE-LEAKAGE CURRENT; HIGH THERMAL STABILITY; INTERFACE PASSIVATION LAYERS; METAL OXIDE SEMICONDUCTOR; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS;

MOSFET DEVICES;

EID: 84900325110     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4871504     Document Type: Article

References (13)

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