High-Performance InP-Based Enhancement-Mode HEMTs Using Non-Alloyed Ohmic Contacts and Pt-Based Buried-Gate Technologies

IEEE Transactions on Electron Devices

Volumn 43, Issue 2, 1996, Pages 252-257

  Chen, Kevinj ^a   Enoki, Takatomo ^a   Maezawa, Koichi ^a   Aral, Kunihiro ^a   Yamamoto, Masafumi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRODES; FREQUENCIES; GATES (TRANSISTOR); OHMIC CONTACTS; PERFORMANCE; PLATINUM; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

ENHANCEMENT MODE; GATE ELECTRODE; INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; MAXIMUM CURRENT GAIN CUTOFF FREQUENCIES; PLATINUM BASED BURIED GATE TECHNOLOGIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030085596     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.481725     Document Type: Article

References (19)

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