InP/GaAsSb DHBTs with 500-GHz maximum oscillation frequency

IEEE Electron Device Letters

Volumn 32, Issue 5, 2011, Pages 629-631

  Lovblom, Rickard ^a   Fluckiger, Ralf ^a   Zeng, Yuping ^a   Ostinelli, Olivier ^a   Alt, Andreas R ^a   Benedickter, Hansruedi ^a   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Double heterojunction bipolar transistors (DHBTs); InP GaAsSb; maximum oscillation frequency (fMAX); millimeter wave transistors

Indexed keywords

CUTOFF FREQUENCY; HETEROJUNCTIONS; MILLIMETER WAVES; TRANSISTORS;

C-DOPED; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; MAXIMUM OSCILLATION FREQUENCY; MILLIMETER WAVE TRANSISTORS; PEAK CURRENTS; TRANSISTOR PERFORMANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 85027931837     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2118738     Document Type: Article

References (14)

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