Physical modeling of degenerately doped compound semiconductors for high-performance HBT design

Solid-State Electronics

Volumn 50, Issue 7-8, 2006, Pages 1440-1449

  Li, James C ^a,b   Sokolich, Marko ^b   Hussain, Tahir ^b   Asbeck, Peter M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

Bandgap narrowing; Degenerate doping; Device simulation; HBT; InP compounds; Mott transition

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; FERMI LEVEL; INDIUM COMPOUNDS; MATHEMATICAL MODELS; PARAMETER ESTIMATION;

BANDGAP NARROWING; DEGENERATE DOPING; DEVICE SIMULATION; INP COMPOUNDS; MOTT TRANSITION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33747152492     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.047     Document Type: Article

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