Traveling-wave amplifiers in transferred substrate InP-HBT technology

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 1, 2009, Pages 2114-2121

  Kraemer, Tomas ^a   Meliani, Chafik ^a   Schmueckle, Franz Josef ^a   Wuerfl, Joachim ^a   Traenkle, Guenther ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Distributed amplifiers, InP heterojunction bipolar transistors (HBTs), integrated circuit modeling

Indexed keywords

INP; INP HETEROJUNCTION BIPOLAR TRANSISTORS; INP-HBT; METAL-INSULATOR-METAL CAPACITORS; MICROSTRIPES; MULTILEVEL WIRING; TRANSFERRED SUBSTRATE; TRAVELING WAVE AMPLIFIERS;

BIPOLAR TRANSISTORS; BROADBAND AMPLIFIERS; CIRCUIT SIMULATION; CUTOFF FREQUENCY; HETEROJUNCTIONS; INTEGRATED CIRCUITS; METAL INSULATOR BOUNDARIES; MICROWAVE INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; TECHNOLOGY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 77958097197     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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