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1
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81455139395
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A 75mW 210GHz Power Amplifier Module
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V. Radisic, K.M.K.H. Leong, S. Sarkozy, X. Mei, W. Yoshida, P.-H. Liu, and R. Lai, "A 75mW 210GHz Power Amplifier Module," 2011 IEEE Compound Semiconductor Integrated Circuit Symposium, Kona, HI, Oct. 16-19, 2011.
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2011 IEEE Compound Semiconductor Integrated Circuit Symposium, Kona, HI, Oct. 16-19, 2011
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Radisic, V.1
Leong, K.M.K.H.2
Sarkozy, S.3
Mei, X.4
Yoshida, W.5
Liu, P.-H.6
Lai, R.7
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2
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77957759269
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THz MMICs based on InP HBT Technology
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May
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J. Hacker, S. Munkyo, A. Young, Z. Griffith, M. Urteaga, T. Reed, and M. Rodwell, "THz MMICs based on InP HBT Technology," Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, pp.1126-1129, May 2010.
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(2010)
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
, pp. 1126-1129
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Hacker, J.1
Munkyo, S.2
Young, A.3
Griffith, Z.4
Urteaga, M.5
Reed, T.6
Rodwell, M.7
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3
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81455139426
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48.8 mW Multi-cell InP HBT Amplifier with on-wafer power combining at 220 GHz
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T. Reed, M.J.W. Rodwell, Z. Griffith, P. Rowell, M. Urteaga, M. Field, and J. Hacker, "48.8 mW Multi-cell InP HBT Amplifier with on-wafer power combining at 220 GHz," 2011 IEEE Compound Semiconductor Integrated Circuit Symposium, Kona, HI, Oct. 16-19, 2011.
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2011 IEEE Compound Semiconductor Integrated Circuit Symposium, Kona, HI, Oct. 16-19, 2011
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Reed, T.1
Rodwell, M.J.W.2
Griffith, Z.3
Rowell, P.4
Urteaga, M.5
Field, M.6
Hacker, J.7
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4
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84866782518
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A 58.4 mW Solid-State Power Amplifier at 220 GHz using InP HBTs
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T. Reed, M.J.W. Rodwell, Z. Griffith, P. Rowell, M. Field, and M. Urteaga, "A 58.4 mW Solid-State Power Amplifier at 220 GHz using InP HBTs," 2012 IEEE MTT-S International Microwave Symposium, Montreal, QC, Canada, June 19, 2012.
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2012 IEEE MTT-S International Microwave Symposium, Montreal, QC, Canada, June 19, 2012
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Reed, T.1
Rodwell, M.J.W.2
Griffith, Z.3
Rowell, P.4
Field, M.5
Urteaga, M.6
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5
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84873187526
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Multifinger 250nm InP HBTs for 220GHz mm-Wave Power
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To be presented at the
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Z. Griffith, M. Urteaga, P. Rowell, R. Pierson, and M. Field, "Multifinger 250nm InP HBTs for 220GHz mm-Wave Power", To be presented at the IEEE Indium Phosphide and Related Materials Conference, Santa Barbara, CA, Aug. 2012.
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IEEE Indium Phosphide and Related Materials Conference, Santa Barbara, CA, Aug. 2012
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Griffith, Z.1
Urteaga, M.2
Rowell, P.3
Pierson, R.4
Field, M.5
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6
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55849139613
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InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies
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Feb.
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M. Rodwell, M. Le, B. Brar, "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies", Proceedings of the IEEE, vol. 96, no. 2, Feb. 2008.
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(2008)
Proceedings of the IEEE
, vol.96
, Issue.2
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Rodwell, M.1
Le, M.2
Brar, B.3
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7
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70149118398
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Advanced InP DHBT Process for High Speed LSI Circuits
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M. Urteaga, R. Pierson, P. Rowell, M.J. Choe, D. Mensa, B. Brar, "Advanced InP DHBT Process for High Speed LSI Circuits", Conf. Proc. IEEE/LEOS Indium Phosphide and Related Materials, Versailles, France, May 25-29, 2008.
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Conf. Proc. IEEE/LEOS Indium Phosphide and Related Materials, Versailles, France, May 25-29, 2008
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Urteaga, M.1
Pierson, R.2
Rowell, P.3
Choe, M.J.4
Mensa, D.5
Brar, B.6
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8
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67649223945
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Comparison of onwafer multiline TRL and LRM+ calibrations for RF CMOS applications
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9-12 Dec.
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Rumiantsev, A.; Sweeney, S.L.; Corson, P.L.; , "Comparison of onwafer multiline TRL and LRM+ calibrations for RF CMOS applications," ARFTG Microwave Measurement Symposium, 2008 72nd, pp.132-136, 9-12 Dec. 2008.
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(2008)
ARFTG Microwave Measurement Symposium, 2008 72nd
, pp. 132-136
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Rumiantsev, A.1
Sweeney, S.L.2
Corson, P.L.3
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