30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz

IEEE Electron Device Letters

Volumn 29, Issue 8, 2008, Pages 830-833

  Kim, Dae Hyun ^a   del Alamo, Jesús A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Cutoff frequency (fT; InAs; Maximum oscillation frequency (fmax; Pseudomorphic high electron mobility transistor (PHEMT); Short channel effects

Indexed keywords

CUTOFF FREQUENCY; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM ARSENIDE; OPTICAL DESIGN; PROCESS ENGINEERING; SEMICONDUCTING INDIUM; SUBSTRATES;

BARRIER THICKNESS; CAPACITIVE PARASITICS; CURRENT GAIN CUT-OFF FREQUENCY; CUT-OFF FREQUENCIES; CUTOFF FREQUENCY (FT; DEVICE DESIGNS; HIGH-FREQUENCY RESPONSE; INAS; INP SUBSTRATES; MAXIMUM OSCILLATION FREQUENCY (FMAX; PSEUDOMORPHIC HIGH-ELECTRON MOBILITY TRANSISTOR (PHEMT); PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS; SHORT-CHANNEL EFFECTS;

FREQUENCY RESPONSE;

EID: 48649099805     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000794     Document Type: Article

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