-
1
-
-
0035506734
-
InP/GaAsSb/InP double HBTs: A new alternative for InPbased DHBTs
-
Nov
-
C. R. Bolognesi, N. Martin, M. W. Dovrak, P. Yeo, X. G. Xu, and S. P. Watkins, "InP/GaAsSb/InP double HBTs: A new alternative for InPbased DHBTs," IEEE Trans. Electron Devices, vol. 48, no. 11, pp. 2631-2639, Nov. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.11
, pp. 2631-2639
-
-
Bolognesi, C.R.1
Martin, N.2
Dovrak, M.W.3
Yeo, P.4
Xu, X.G.5
Watkins, S.P.6
-
2
-
-
5044246559
-
InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and ft, fmax > 268 GHz
-
Oct
-
Z. Griffith, Y. M. Kim, M. Dahlström, A. C. Gossard, and M. J. W. Rodwell, "InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and ft, fmax > 268 GHz," IEEE Electron Device Lett., vol. 25, no. 10, pp. 675-677, Oct. 2004.
-
(2004)
IEEE Electron Device Lett
, vol.25
, Issue.10
, pp. 675-677
-
-
Griffith, Z.1
Kim, Y.M.2
Dahlström, M.3
Gossard, A.C.4
Rodwell, M.J.W.5
-
3
-
-
33847262595
-
6-inch MOVPE metamorphic HBT with low indium composition InGaAs base and collector for high power application
-
Y. Otoki, T. Tsuji, N. Sato, T. Tanaka, H. Kamogawa, and Y. Sasaki, "6-inch MOVPE metamorphic HBT with low indium composition InGaAs base and collector for high power application," in GaAs-MANTECH Conf., no. 13b, 2002.
-
(2002)
GaAs-MANTECH Conf
, Issue.13 B
-
-
Otoki, Y.1
Tsuji, T.2
Sato, N.3
Tanaka, T.4
Kamogawa, H.5
Sasaki, Y.6
-
4
-
-
0346955939
-
Defects in epitaxial multilayers: I. Misfit dislocations
-
J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers: I. Misfit dislocations," J. Cryst. Growth, vol. 27, pp. 118-125, 1974.
-
(1974)
J. Cryst. Growth
, vol.27
, pp. 118-125
-
-
Matthews, J.W.1
Blakeslee, A.E.2
-
5
-
-
0005791196
-
Vapor phase epitaxial growth and characterization of InP on GaAs
-
May
-
S. J. J. Teng, J. M. Ballingall, and F. J. Rosenbaum, "Vapor phase epitaxial growth and characterization of InP on GaAs," Appl. Phys. Lett., vol. 48, no. 18, pp. 1217-1219, May 1986.
-
(1986)
Appl. Phys. Lett
, vol.48
, Issue.18
, pp. 1217-1219
-
-
Teng, S.J.J.1
Ballingall, J.M.2
Rosenbaum, F.J.3
-
6
-
-
0025840095
-
Improvement of InP crystal quality grown on GaAs substrates and device applications
-
T. Kimura, E. Ishimura, F. Uesugi, M. Tsugami, K. Mizuguchi, and T. Murotani, "Improvement of InP crystal quality grown on GaAs substrates and device applications," J. Cryst. Growth, vol. 107, no. 1-4, pp. 827-831, 1991.
-
(1991)
J. Cryst. Growth
, vol.107
, Issue.1-4
, pp. 827-831
-
-
Kimura, T.1
Ishimura, E.2
Uesugi, F.3
Tsugami, M.4
Mizuguchi, K.5
Murotani, T.6
-
7
-
-
0142012146
-
Direct growth of high-quality InP layers on GaAs substrates at low temperature by metalorganic vapor phase epitaxy
-
Aug
-
C.-I. Liao, K. F. Yarn, C. L. Lin, Y. L. Yin, and Y. H. Wong, "Direct growth of high-quality InP layers on GaAs substrates at low temperature by metalorganic vapor phase epitaxy," Jpn. J. Appl. Phys., vol. 42, no. 8, pp. 4913-4918, Aug. 2003.
-
(2003)
Jpn. J. Appl. Phys
, vol.42
, Issue.8
, pp. 4913-4918
-
-
Liao, C.-I.1
Yarn, K.F.2
Lin, C.L.3
Yin, Y.L.4
Wong, Y.H.5
-
8
-
-
36549097465
-
Heteroepitaxial growth of InP on a GaAs substrate by low-pressure metalorganic vapor phase epitaxy
-
Aug
-
H. Horikawa, Y. Ogawa, K. Kawai, and M. Sakuta, "Heteroepitaxial growth of InP on a GaAs substrate by low-pressure metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 53, no. 5, pp. 397-399, Aug. 1988.
-
(1988)
Appl. Phys. Lett
, vol.53
, Issue.5
, pp. 397-399
-
-
Horikawa, H.1
Ogawa, Y.2
Kawai, K.3
Sakuta, M.4
-
9
-
-
0030566484
-
Influence of growth interruption on the heterointerface morphology of InGaAs/GaAs strained quantum wells
-
Dec
-
J. R. Botha and A. W. R. Leitch, "Influence of growth interruption on the heterointerface morphology of InGaAs/GaAs strained quantum wells," J. Cryst. Growth, vol. 169, no. 4, pp. 629-636, Dec. 1996.
-
(1996)
J. Cryst. Growth
, vol.169
, Issue.4
, pp. 629-636
-
-
Botha, J.R.1
Leitch, A.W.R.2
-
10
-
-
0026255288
-
Influence of the nucleation and annealing conditions on the quality of InP layers grown on GaAs by MOCVD
-
G. Coudenys, I. Moerman, and P. Demeester, "Influence of the nucleation and annealing conditions on the quality of InP layers grown on GaAs by MOCVD," J. Cryst. Growth, vol. 114, no. 3, pp. 314-320, 1991.
-
(1991)
J. Cryst. Growth
, vol.114
, Issue.3
, pp. 314-320
-
-
Coudenys, G.1
Moerman, I.2
Demeester, P.3
|