Improvement in high frequency and noise characteristics of inp-based hemts by reducing parasitic capacitance

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2008, Pages

  Takahashi, T ^a   Makiyama, K ^a   Hara, N ^a   Sato, M ^a   Hirose, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

BCB; Capacitance; Cavity; Frequency; HEMT; InP; Noise; Scaling

Indexed keywords

BCB; CAVITY; FREQUENCY; HEMT; INP; NOISE; SCALING;

CAPACITANCE; CUTOFF FREQUENCY; DIELECTRIC FILMS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; INDIUM; INDIUM PHOSPHIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70149087802     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2008.4702964     Document Type: Conference Paper

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