Control of InGaAs and InAs facets using metal modulation epitaxy

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 33, Issue 1, 2015, Pages

  Wistey, Mark A ^a   Baraskar, Ashish K ^b   Singisetti, Uttam ^c   Burek, Greg J ^d   Shin, Byungha ^e   Kim, Eunji ^e   McIntyre, Paul C ^e   Gossard, Arthur C ^f   Rodwell, Mark J W ^f  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b IBM MICROELECTRONICS   (United States)

^c State University of New York   (United States)

^d University of California   (United States)

^e STANFORD UNIVERSITY   (United States)

^f UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM; SILICON NITRIDE;

CHANNEL RESISTANCE; CONFORMAL GROWTH; FIELD EFFECT TRANSISTOR (FETS); NANOSCALE DEVICE; PATTERNED FEATURES; POLYCRYSTALLINE GROWTH; SELF-ALIGNED; SOURCE-DRAIN;

FIELD EFFECT TRANSISTORS;

EID: 84923677550     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4905497     Document Type: Article

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