High mobility III-V MOSFETs for RF and digital applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 621-624

  Passlack, M ^a   Zurcher, P ^a   Rajagopalan, K ^a   Droopad, R ^a   Abrokwah, J ^a   Tutt, M ^a   Park, Y B ^a   Johnson, E ^a   Hartin, O ^a   Zlotnicka, A ^a   Fejes, P ^a   Hill, R J W ^b   Moran, D A J ^b   Li, X ^b   Zhou, H ^b   Macintyre, D ^b   Thoms, S ^b   Asenov, A ^b   Kalna, K ^b   Thayne, I G ^b  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES;

DIGITAL APPLICATIONS; HIGH MOBILITY CHANNELS; HIGH-MOBILITY; MOSFETS;

MOSFET DEVICES;

EID: 50249172840     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419016     Document Type: Conference Paper

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