High performance raised source/drain InAs/In0.53Ga 0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer

Applied Physics Letters

Volumn 103, Issue 23, 2013, Pages

  Lee, Sanghoon ^a   Huang, Cheng Ying ^a   Cohen Elias, Doron ^a   Law, Jeremy J M ^a   Chobpattanna, Varistha ^a   Krämer, Stephan ^a   Thibeault, Brian J ^a   Mitchell, William ^a   Stemmer, Susanne ^a   Gossard, Arthur C ^a   Rodwell, Mark J W ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE LENGTH; HIGH-FIELD REGIONS; METAL OXIDE SEMICONDUCTOR; OFF-STATE LEAKAGE; PEAK TRANSCONDUCTANCE; RAISED SOURCE/DRAIN; SUB-THRESHOLD SWING(SS); VERTICAL SPACER;

DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS;

GALLIUM;

EID: 84889836345     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4838660     Document Type: Article

References (10)

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