In0.53Ga0.47 As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1 nm

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Koveshnikov, S ^a,d   Goel, N ^a,b   Majhi, P ^a,b   Wen, H ^c   Santos, M B ^c   Oktyabrsky, S ^d   Tokranov, V ^d   Kambhampati, R ^d   Moore, R ^d   Zhu, F ^e   Lee, J ^e   Tsai, W ^a  

^a INTEL CORPORATION   (United States)

^b SEMATECH   (United States)

^c UNIVERSITY OF OKLAHOMA   (United States)

^d STATE UNIVERSITY OF NEW YORK   (United States)

^e The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; ENERGY STORAGE; METALLIC COMPOUNDS; MOLECULAR DYNAMICS; MOS DEVICES; SEMICONDUCTOR MATERIALS;

(PL) PROPERTIES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MOLECULAR BEAM EPITAXIAL;

PAPER CAPACITORS;

EID: 44849083052     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2931031     Document Type: Article

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