High performance In0.7Ga0.3As metal-oxide- semiconductor transistors with mobility >4400 cm2 /V s using InP barrier layer

Applied Physics Letters

Volumn 94, Issue 19, 2009, Pages

  Zhao, Han ^a   Chen, Yen Ting ^a   Yum, Jung Hwan ^a   Wang, Yanzhen ^a   Goel, Niti ^b,c   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BARRIER LAYERS; CHANNEL MOBILITY; DEVICE PERFORMANCE; HIGH DRIVE CURRENT; INP; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; MOSFETS; SUBTHRESHOLD SWING;

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); TRANSCONDUCTANCE; TRANSISTORS;

MOSFET DEVICES;

EID: 67049158595     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3133360     Document Type: Article

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