Strained epilayers effectively reduce plasma-induced fluorine damage in P-HEMTs

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 4, 2005, Pages 706-712

  Uchiyama, Hiroyuki ^a,b   Taniguchi, Takafumi ^a,b   Kudo, Makoto ^a,b  

^a HITACHI LTD   (Japan)

^b JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

Author keywords

Damage; Dry etching; Fluorine

Indexed keywords

CHANNEL LAYERS; FLUORINE-TRAPPING BARRIERS; POST-THERMAL ANNEALING;

ANNEALING; CARRIER CONCENTRATION; ELECTRON MOBILITY; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 31044437130     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2005.857874     Document Type: Article

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