Logic characteristics of 40 nm thin-channel InAs HEMTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2010, Pages 496-499

  Kim, Tae Woo ^a   Kim, Dae Hyun ^b   Del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b Teledyne Scientific Company   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL DEVICE; CHANNEL THICKNESS; ELECTROSTATIC INTEGRITY; GATE LENGTH; INAS; LOGIC CHARACTERISTICS; SOURCE RESISTANCE;

INDIUM PHOSPHIDE; SCALABILITY; SEMICONDUCTING INDIUM;

ELECTROSTATIC DEVICES;

EID: 77955952584     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2010.5516257     Document Type: Conference Paper

References (7)

1. R. Chau et al., IEEE Tran. Nanotechnol., pp. 153, 2005.
2. D.-H. Kim et al., IEEE TED, pp. 2546, 2008.
3. D.-H. Kim et al., IPRM, PP. 132, 2009.
4. D.-H. Kim et al., IEDM, pp. 146, 2008.
5. K. Uchida et al., IEDM, pp. 633, 2001.
6. D.-H. Kim et al., IEDM, pp. 629, 2007.
7. D. R. Greenberg et al., IEEE TED, pp. 1304, 1996.