Extremely scaled high- k /In0.53Ga0.47As gate stacks with low leakage and low interface trap densities

Journal of Applied Physics

Volumn 116, Issue 12, 2014, Pages

  Chobpattana, Varistha ^a   Mikheev, Evgeny ^a   Zhang, Jack Y ^a   Mates, Thomas E ^a   Stemmer, Susanne ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; DISPERSIONS; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; INDIUM COMPOUNDS; LEAKAGE CURRENTS; LOGIC GATES; METALS; MOS DEVICES; NITROGEN PLASMA; OXIDE MINERALS; OXIDE SEMICONDUCTORS; SEMICONDUCTOR DEVICE MANUFACTURE; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

CAPACITANCE DENSITY; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; FREQUENCY DISPERSION; GATE DIELECTRIC STACKS; INTERFACE TRAP DENSITY; LOW-FREQUENCY DISPERSIONS; MICROSCOPIC MECHANISMS; SEMICONDUCTOR CHANNELS;

GALLIUM COMPOUNDS;

EID: 84908346590     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4896494     Document Type: Article

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