SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 3, 2010, Pages

Mobility and remote scattering in buried InGaAs quantum well channels with high-k gate oxide

(8) Nagaiah, P a Tokranov, V a Yakimov, M a Koveshnikov, S a Oktyabrsky, S a Veksler, D b Tsai, W b Bersuker, G b

a STATE UNIVERSITY OF NEW YORK (United States)

b SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; GALVANOMAGNETIC EFFECTS; HAFNIUM COMPOUNDS; PASSIVATION; SCATTERING; SEMICONDUCTOR QUANTUM WELLS; SILICON COMPOUNDS;

BARRIER THICKNESS; FIXED CHARGES; HALL ELECTRON MOBILITY; HIGH-K GATE OXIDE; IN-SITU; INGAAS QUANTUM WELLS; MOBILITY DEGRADATION; QUANTUM WELL; REMOTE COULOMB SCATTERINGS; REMOTE SCATTERING; SHEET CARRIER DENSITIES; SIMULATION RESULT; TEMPERATURE DEPENDENCIES;

HALL MOBILITY;

EID: 77952962784 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3360903 Document Type: Conference Paper

Times cited : (17)

References (18)

1
- 77950972843
- R. Chau, CS ManTech Tech Digest, 2008, p. 15.
- (2008) CS ManTech Tech Digest , pp. 15
- Chau, R.¹

2
- 36549081349
- 2/V · s, and transconductance of over 475 μS/μm
- DOI 10.1109/LED.2007.910009
- R. J. W. Hill, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 1080 (2007). 10.1109/LED.2007.910009 (Pubitemid 350187493)
- (2007) IEEE Electron Device Letters , vol.28 , Issue.12 , pp. 1080-1082
- Hill, R.J.W.¹ Moran, D.A.J.² Li, X.³ Zhou, H.⁴ Macintyre, D.⁵ Thoms, S.⁶ Asenov, A.⁷ Zurcher, P.⁸ Rajagopalan, K.⁹ Abrokwah, J.¹⁰ Droopad, R.¹¹ Passlack, M.¹² Thayne, I.G.¹³

3
- 36149000642
- 3 as gate dielectric
- DOI 10.1109/LED.2007.906436
- Y. Xuan, Y. Q. Wu, H. C. Lin, T. Shen, and P. D. Ye, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 935 (2007). 10.1109/LED.2007.906436 (Pubitemid 350111775)
- (2007) IEEE Electron Device Letters , vol.28 , Issue.11 , pp. 935-938
- Xuan, Y.¹ Wu, Y.Q.² Lin, H.C.³ Shen, T.⁴ Ye, P.D.⁵

4
- 47249143400
- S. Oktyabrsky, S. Koveshnikov, V. Tokranov, M. Yakimov, R. Kambhampati, H. Bakhru, F. Zhu, J. Lee, and W. Tsai, Technical Digest of the 65th Device Research Conference Tech Digest, 2007, p. 203.
- (2007) Technical Digest of the 65th Device Research Conference Tech Digest , pp. 203
- Oktyabrsky, S.¹ Koveshnikov, S.² Tokranov, V.³ Yakimov, M.⁴ Kambhampati, R.⁵ Bakhru, H.⁶ Zhu, F.⁷ Lee, J.⁸ Tsai, W.⁹

5
- 85067721785
- TDIMD5 0163-1918
- D. H. N. Goel, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2008, 15.1.
- (2008) Tech. Dig.-Int. Electron Devices Meet. , pp. 151
- Goel, D.H.N.¹

6
- 63349085439
- JCRGAE 0022-0248. 10.1016/j.jcrysgro.2008.11.037
- S. Oktyabrsky, V. Tokranov, S. Koveshnikov, M. Yakimov, R. Kambhampati, H. Bakhru, R. Moore, and W. Tsai, J. Cryst. Growth JCRGAE 0022-0248 311, 1950 (2009). 10.1016/j.jcrysgro.2008.11.037
- (2009) J. Cryst. Growth , vol.311 , pp. 1950
- Oktyabrsky, S.¹ Tokranov, V.² Koveshnikov, S.³ Yakimov, M.⁴ Kambhampati, R.⁵ Bakhru, H.⁶ Moore, R.⁷ Tsai, W.⁸

7
- 0342448761
- JAPNDE 0021-4922. 10.1143/JJAP.29.2017
- T. Matsuoka, E. Kobayashi, K. Taniguchi, C. Hamaguchi, and S. Sasa, Jpn. J. Appl. Phys. Part 1 JAPNDE 0021-4922 29, 2017 (1990). 10.1143/JJAP.29.2017
- (1990) Jpn. J. Appl. Phys. Part 1 , vol.29 , pp. 2017
- Matsuoka, T.¹ Kobayashi, E.² Taniguchi, K.³ Hamaguchi, C.⁴ Sasa, S.⁵

8
- 0020844333
- xAs/GaAs LAYERS.
- DOI 10.1063/1.331922
- K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoc, J. Appl. Phys. JAPIAU 0021-8979 54, 6432 (1983). 10.1063/1.331922 (Pubitemid 14484208)
- (1983) Journal of Applied Physics , vol.54 , Issue.11 , pp. 6432-6438
- Lee, K.¹ Shur, M.S.² Drummond, T.J.³ Morkoc, H.⁴

9
- 38149059787
- JAPIAU 0021-8979. 10.1063/1.2826951
- B. Laikhtman and P. M. Solomon, J. Appl. Phys. JAPIAU 0021-8979 103, 014501 (2008). 10.1063/1.2826951
- (2008) J. Appl. Phys. , vol.103 , pp. 014501
- Laikhtman, B.¹ Solomon, P.M.²

10
- 34249095848
- 2/TiN gate MOSFETs
- DOI 10.1016/j.mee.2007.04.108, PII S0167931707004595, INFOS 2007
- M. A. Negara, K. Cherkaoui, P. Majhi, C. D. Young, W. Tsai, D. Bauza, G. Ghibaudo, and P. K. Hurley, Microelectron. Eng. MIENEF 0167-9317 84, 1874 (2007). 10.1016/j.mee.2007.04.108 (Pubitemid 46779136)
- (2007) Microelectronic Engineering , vol.84 , Issue.9-10 , pp. 1874-1877
- Negara, M.A.¹ Cherkaoui, K.² Majhi, P.³ Young, C.D.⁴ Tsai, W.⁵ Bauza, D.⁶ Ghibaudo, G.⁷ Hurley, P.K.⁸

11
- 54049142074
- JAPIAU 0021-8979. 10.1063/1.2968217
- S. Barraud, O. Bonno, and M. Casse, J. Appl. Phys. JAPIAU 0021-8979 104, 073725 (2008). 10.1063/1.2968217
- (2008) J. Appl. Phys. , vol.104 , pp. 073725
- Barraud, S.¹ Bonno, O.² Casse, M.³

12
- 37148999689
- Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n -channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study
- DOI 10.1063/1.2821712
- K. Maitra, M. M. Frank, V. Narayanan, V. Misra, and E. A. Cartier, J. Appl. Phys. JAPIAU 0021-8979 102, 114507 (2007). 10.1063/1.2821712 (Pubitemid 350262160)
- (2007) Journal of Applied Physics , vol.102 , Issue.11 , pp. 114507
- Maitra, K.¹ Frank, M.M.² Narayanan, V.³ Misra, V.⁴ Cartier, E.A.⁵

13
- 33750687577
- High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon
- DOI 10.1016/j.mseb.2006.08.018, PII S0921510706004703
- S. Oktyabrsky, V. Tokranov, M. Yakimov, R. Moore, S. Koveshnikov, W. Tsai, F. Zhu, and J. C. Lee, Mater. Sci. Eng. B MSBTEK 0921-5107 135, 272 (2006). 10.1016/j.mseb.2006.08.018 (Pubitemid 44708653)
- (2006) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.135 , Issue.3 , pp. 272-276
- Oktyabrsky, S.¹ Tokranov, V.² Yakimov, M.³ Moore, R.⁴ Koveshnikov, S.⁵ Tsai, W.⁶ Zhu, F.⁷ Lee, J.C.⁸

14
- 65449127795
- APPLAB 0003-6951. 10.1063/1.3120546
- C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, Appl. Phys. Lett. APPLAB 0003-6951 94, 162101 (2009). 10.1063/1.3120546
- (2009) Appl. Phys. Lett. , vol.94 , pp. 162101
- Hinkle, C.L.¹ Milojevic, M.² Brennan, B.³ Sonnet, A.M.⁴ Aguirre-Tostado, F.S.⁵ Hughes, G.J.⁶ Vogel, E.M.⁷ Wallace, R.M.⁸

15
- 52949119905
- APPLAB 0003-6951. 10.1063/1.2991340
- A. M. Sonnet, C. L. Hinkle, M. N. Jivani, R. A. Chapman, G. P. Pollack, R. M. Wallace, and E. M. Vogel, Appl. Phys. Lett. APPLAB 0003-6951 93, 122109 (2008). 10.1063/1.2991340
- (2008) Appl. Phys. Lett. , vol.93 , pp. 122109
- Sonnet, A.M.¹ Hinkle, C.L.² Jivani, M.N.³ Chapman, R.A.⁴ Pollack, G.P.⁵ Wallace, R.M.⁶ Vogel, E.M.⁷

16
- 0001582597
- PRBMDO 0163-1829. 10.1103/PhysRevB.33.5595
- K. Yokoyama and K. Hess, Phys. Rev. B PRBMDO 0163-1829 33, 5595 (1986). 10.1103/PhysRevB.33.5595
- (1986) Phys. Rev. B , vol.33 , pp. 5595
- Yokoyama, K.¹ Hess, K.²

17
- 48949087777
- JCTNAB 1546-1955
- J. R. Watling, A. R. Brown, G. Ferrari, J. R. Barker, G. Bersuker, P. Zeitzoff, and A. Asenov, J. Comput. Theor. Nanosci. JCTNAB 1546-1955 5, 1072 (2008).
- (2008) J. Comput. Theor. Nanosci. , vol.5 , pp. 1072
- Watling, J.R.¹ Brown, A.R.² Ferrari, G.³ Barker, J.R.⁴ Bersuker, G.⁵ Zeitzoff, P.⁶ Asenov, A.⁷

18
- 33751099033
- The effect of interfacial layer properties on the performance of Hf-based gate stack devices
- DOI 10.1063/1.2362905
- G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, and B. H. Lee, J. Appl. Phys. JAPIAU 0021-8979 100, 094108 (2006). 10.1063/1.2362905 (Pubitemid 44772613)
- (2006) Journal of Applied Physics , vol.100 , Issue.9 , pp. 094108
- Bersuker, G.¹ Park, C.S.² Barnett, J.³ Lysaght, P.S.⁴ Kirsch, P.D.⁵ Young, C.D.⁶ Choi, R.⁷ Lee, B.H.⁸ Foran, B.⁹ Van Benthem, K.¹⁰ Pennycook, S.J.¹¹ Lenahan, P.M.¹² Ryan, J.T.¹³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.