High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2015-February, Issue February, 2015, Pages 25.3.1-25.3.4

  Sun, Y ^a   Majumdar, A ^a   Cheng, C W ^a   Martin, R M ^a   Bruce, R L ^a   Yau, J B ^a   Farmer, D B ^a   Zhu, Y ^a   Hopstaken, M ^a   Frank, M M ^a   Ando, T ^a   Lee, K T ^a   Rozen, J ^a   Basu, A ^a   Shiu, K T ^a   Kerber, P ^a   Park, D G ^a   Narayanan, V ^a   Mo, R T ^a   Sadana, D K ^a   Leobandung, E ^a   more..

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; GALLIUM ALLOYS; INDIUM ALLOYS; SEMICONDUCTOR ALLOYS;

CMOS COMPATIBLE; EFFECTIVE CHANNEL LENGTH; HIGH-PERFORMANCE CMOS; PEAK TRANSCONDUCTANCE; PLANAR ARCHITECTURE; RAISED SOURCE/DRAIN; SERIES RESISTANCES; SOURCE/DRAIN EXTENSION;

MOSFET DEVICES;

EID: 84938218674     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2014.7047106     Document Type: Conference Paper

References (44)

1. J. del Alamo, Nature, vol. 479, pp. 317-323, 2011.
2. S. Suemitsu et al., IEDM Tech. Dig., pp. 223-226, 1998.
3. D. Xu et al., IEEE Trans. Electron Devices, vol. 47, pp. 33-43, 2000.
4. Y. Yamashita et al., IEEE Electron Device Lett., vol. 23, pp. 573-575, 2002.
5. K. Shinohara et al., IEEE Electron Device Lett., vol. 25, pp. 241-243, 2004.
6. D. H. Kim et al., IEDM Tech. Dig., pp. 1-4, 2005.
7. D. H. Kim and J. del Alamo, IEDM Tech. Dig., pp. 1-4, 2006.
8. D. H. Kim et al., IEEE Trans. Electron Devices, vol. 54, pp. 2606-2613, 2007.
9. D. H. Kim and J. del Alamo, IEDM Tech. Dig., pp. 629-632, 2007.
10. D. H. Kim and J. del Alamo, IEEE Trans. Electron Devices, vol. 55, pp. 2546-2553, 2008.
11. D. H. Kim and J. del Alamo, IPRM Tech. Dig., pp. 132-135, 2009.
12. T. W. Kim et al., IEDM Tech. Dig., p. 483-486, 2009.
13. G. Dewey et al., IEDM Tech. Dig., pp. 487-490, 2009.
14. T. W. Kim et al., IPRM Tech. Dig., pp. 1-4, 2010.
15. D. H. Kim et al., IEDM Tech. Dig., pp. 692-695, 2010.
16. T. W. Kim et al., IEDM Tech. Dig., pp. 696-699, 2010.
17. T. W. Kim et al., Electron. Lett., vol. 47, pp. 406-407, 2011.
18. D. H. Kim et al., IEDM Tech. Dig., pp. 319-322, 2011.
19. Y. Sun et al., IEDM Tech. Dig., pp. 1-4, 2008.
20. M. Radosavljevic et al., IEDM Tech. Dig., pp. 319-322, 2009.
21. M. Radosavljevic et al., IEDM Tech. Dig., pp. 765-768, 2011.
22. T. W. Kim et al., VLSI Tech. Dig., pp. 179-180, 2012.
23. D. H. Kim et al., IEDM Tech. Dig., pp. 761-764, 2012.
24. D. H. Kim et al., IEEE Electron Device Lett., vol. 34, pp. 196-198, 2013.
25. S. Lee et al., VLSI Tech. Dig., pp. T246-T247, 2013.
26. S. Lee et al., IPRM Tech. Dig., pp. 1-2, 2013.
27. S. Lee et al., App. Phys. Lett., vol. 103, art. 233503, 2013.
28. T. W. Kim et al., IEDM Tech. Dig., pp. 425-428, 2013.
29. C.-S. Shin et al., VLSI Tech. Dig., pp. 30-31, 2014.
30. S. Lee et al., VLSI Tech. Dig., pp. 54-55, 2014.
31. V. T. Arun et al., VLSI Tech. Dig., pp. 72-73, 2014.
32. X. Zhou et al., VLSI Tech. Dig., pp. 166-167, 2014.
33. Y. Q. Wu et al., IEEE Electron Device Lett., vol. 30, pp. 700-702, 2009.
34. U. Singisetti et al., IEEE Electron Device Lett., vol. 30, pp. 1128-1130, 2009.
35. J. Lin et al., IEDM Tech. Dig., pp. 757-760, 2012.
36. Y. Sun et al., IEDM Tech. Dig., pp. 48-51, 2013.
37. S. W. Chang et al., IEDM Tech. Dig., pp. 417-420, 2013.
38. J. Lin et al., IEDM Tech. Dig., pp. 421-424, 2013.
39. N. Waldron et al., VLSI Tech. Dig., pp. 26-27, 2014.
40. A. Majumdar and D. A. Antoniadis, IEEE Trans. Electron Devices, vol. 61, pp. 351-358, 2014.
41. A. Majumdar et al., to appear in IEEE Trans. Electron Devices, 2014.
42. M. Rodwell et al., IPRM Tech. Dig., pp. 1-6, 2010.
43. M. S. Lundstrom, IEEE Electron Device Lett., vol. 18, pp. 361-363, 1997.
44. M. S. Lundstrom IEEE Electron Device Lett., vol. 22, pp. 293-295, 2001.