Sub 50 nm InP HEMT with fT = 586 GHz and amplifier circuit gain at 390 GHz for sub-millimeter wave applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2010, Pages 137-139

  Lai, R ^a   Mei, X B ^a   Sarkozy, S ^a   Yoshida, W ^a   Liu, P H ^a   Lee, J ^a   Lange, M ^a   Radisic, V ^a   Leong, K ^a   Deal, W ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIER CIRCUITS; INP HEMT; SUB-50 NM;

INDIUM;

INDIUM PHOSPHIDE;

EID: 77955946879     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2010.5516002     Document Type: Conference Paper

References (4)

1. R. Lai et. al, "Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz" Proc. IEEE Electron Devices Meeting, 10-12 Dec. 2007, Washington, DC, pp. 609-611
2. A. Leuther et. al, "Metamorphic HEMT Technology for Low Noise Applications", International Conference on InP and Related Materials Digest, 2009, Newport Beach, USA
3. W. R. Deal, X. Mei, V. Radisic, W. Yoshida, P. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, and R. Lai, "Demonstration of S-MMIC LNA with 16-dB gain at 340 GHz," Compound Semiconductor Integrated Circuit Symposium, pp. 1-4, Oct. 2007.
4. K. Leong et. al, "A 340 GHz Integrated CB-CPW-to-Waveguide Transition for Sub Millimeter-Wave MMIC Packaging", IEEE Microwave Wireless and Component Letts, 2008.