30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 223-226

  Suemitsu, Tetsuya ^a   Ishii, Tetsuyoshi ^a   Yokoyama, Haruki ^a   Umeda, Yohtaro ^a   Enoki, Takatomo ^a   Ishii, Yasunobu ^a   Tamamura, Toshiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRON BEAM LITHOGRAPHY; FULLERENES; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

LATTICE MATCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032272325     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)