Growth of InP high electron mobility transistor structures with Te doping

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 596-599

  Bennett, Brian R ^a   Suemitsu, Tetsuya ^b   Waldron, Niamh ^b   Del Alamo, Jesús A ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B1. Arsenides; B2. Semiconducting III V materials; B3. Field effect transistors; B3. High electron mobility transistors

Indexed keywords

BAND STRUCTURE; CHARACTERIZATION; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; TELLURIUM;

MIXED ANIONS; N-TYPE DOPANTS; SEMICONDUCTING III-V MATERIALS; TE DOPING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 18444386219     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.070     Document Type: Conference Paper

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