Logic performance of 40 nm InAs HEMTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 629-632

  Kim, Dae Hyun ^a   Del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; INDIUM ARSENIDE;

BARRIER THICKNESS; FIGURES OF MERIT;

SEMICONDUCTING INDIUM;

EID: 48649096271     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419018     Document Type: Conference Paper

References (11)

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4. D.-H. Kim et al., in IEDM 2006, p. 837.
5. K. Saraswat et al., in IEDM 2006, p. 659.
6. D.-H. Kim et al., JSTS 2006, p. 146.
7. T.-W. Kim et al., APL 2007, p. 102110.
8. D.-H. Kim et al., IEEE TED 2007, p. 2606.
9. D. Antoniadis et al., IBM Journal 2006, p. 363.
10. K. Rim et al., IEEE TED 2000, p. 1406.
11. A. Lochlefeld et al., IBM Journal 2002, p. 347.