Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate

IEEE Electron Device Letters

Volumn 29, Issue 3, 2008, Pages 206-208

  Thelander, Claes ^a   FröbergFroberg, Linus E ^a   Rehnstedt, Carl ^b   Samuelson, Lars ^b   Wernersson, Lars Erik ^b  

^a LUND UNIVERSITY   (Sweden)

^b Qumat Technologies AB   (Sweden)

Author keywords

Field effect transistor (FET); InAs; Nanowires

Indexed keywords

GATE DIELECTRICS; INDIUM ARSENIDE; NANOWIRES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRAIN VOLTAGE; SOURCE CONTACT; WRAP GATE;

FIELD EFFECT TRANSISTORS;

EID: 40749151146     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.915374     Document Type: Article

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