Transconductance degradation in near-THz InP double-heterojunction bipolar transistors

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1068-1070

  Jain, Vibhor ^a   Rodwell, Mark J W ^a  

^a University of California   (United States)

Author keywords

Double heterojunction bipolar transistor (DHBT); InGaAs; InP; scaling; transconductance

Indexed keywords

APPLIED BIAS; CURRENT INJECTIONS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; ELECTRON EFFECTIVE MASS; EMITTER CURRENTS; FERMI-DIRAC STATISTICS; HETERO INTERFACES; HIGH CURRENT DENSITIES; INGAAS; INP; QUANTUM MECHANICAL; QUASI-FERMI LEVEL; SCALING; SPACE CHARGE REGIONS;

DEGRADATION; ELECTRON MOBILITY; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 79960912221     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2157451     Document Type: Article

References (14)

1. J. Hacker, M. Seo, A. Young, Z. Griffith, M. Urteaga, T. Reed, and M. Rodwell, "THz MMICs based on InP HBT technology," in Proc. IEEE MTT-S Int. Microw. Symp. Exhib., May 23-28, 2010, pp. 1126-1129.
2. J. C. Zolper, "Challenges and opportunities for InP HBT mixed signal circuit technology," in Proc. Int. Conf. Indium Phosphide Relat. Mater., May 12-16, 2003, pp. 8-11.
3. M. J. W. Rodwell, M. Le, and B. Brar, "InP Bipolar ICs: Scaling roadmaps, frequency limits, manufacturable technologies," in Proc. IEEE, vol. 96, no. 2, pp. 271-286, Feb. 2008.
4. M. J. W. Rodwell, M. Urteaga, T. Mathew, D. Scott, D. Mensa, Q. Lee, J. Guthrie, Y. Betser, S. C.Martin, R. P. Smith, S. Jaganathan, S. Krishnan, S. I. Long, R. Pullela, B. Agarwal, U. Bhattacharya, L. Samoska, and M. Dahlstorm, "Submicron scaling of HBTs," IEEE Trans. Electron Devices, vol. 48, no. 11, pp. 2606-2624, Nov. 2001. (Pubitemid 33105918)
5. Z. Griffith, Y. Dong, D. Scott, Y. Wei, N. Parthasarathy, M. Dahlstrom, C. Kadow, V. Paidi, M. J. W. Rodwell, M. Urteaga, R. Pierson, P. Rowell, B. Brar, S. Lee, N. X. Nguyen, and C. Nguyen, "Transistor and circuit design for 100-200 GHz ICs," IEEE J. Solid-State Circuits, vol. 40, no. 10, pp. 2061-2069, Oct. 2005.
6. Z. Griffith, E. Lind, M. J.W. Rodwell, X.-M. Fang, D. Loubychev, Y.Wu, J. M. Fastenau, and A. W. K. Liu, "60 nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz fT, BVCEO = 2.5 V, and BVCBO = 2.7 V," in Proc. IEEE CSIC, Nov. 12-15, 2006, pp. 275-278.
7. W. Snodgrass, W. Hafez, N. Harff, and M. Feng, "Pseudomorphic InP/InGaAs heterojunction bipolar transistors (PHBTs) experimentally demonstrating fT = 765 GHz at 25 ?C increasing to fT = 845 GHz at ?55 ?C," in IEDM Tech. Dig., Dec. 2006, pp. 1-4.
8. V. Jain, E. Lobisser, A. Baraskar, B. J. Thibeault, M. J. W. Rodwell, Z. Griffith, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, and W. K. Liu, "InGaAs/InP DHBTs in a dry-etched, refractory metal emitter process demonstrating simultaneous ft/fmax ∼ 430/800 GHz," IEEE Electron Device Lett., vol. 32, no. 1, pp. 24-26, Jan. 2011.
9. W. Frensley, Bandprof, Semiconductor Device Simulation Tool, University of Texas, Dallas, TX.
10. N. Machida, Y. Miyamoto, and K. Furuya, "Minimum emitter charging time for heterojunction bipolar transistors," in Proc. Indium Phosphide Relat. Mater. Conf., 2006, pp. 325-328. (Pubitemid 46287456)
11. C. Y. Chang and S. M. Sze, "Carrier transport across metal-semiconductor barriers," Solid State Electron., vol. 13, no. 6, pp. 727-740, Jun. 1970.
12. Q.-G. Zhu and H. Kroemer, "Interface connection rules for effectivemass wave functions at an abrupt heterojunction between two different semiconductors," Phys. Rev. B, Condens. Matter, vol. 27, no. 6, pp. 3519-3527, Mar. 1983.
13. M. Yamada, T. Uesawa, Y. Miyamoto, and K. Furuya, "Deviation from proportional relationship between emitter charging time and inverse current of heterojunction bipolar transistors operating at high current density," IEEE Electron Device Lett., vol. 32, no. 4, pp. 491-493, Apr. 2011.
14. W. Liu, H.-F. Chau, and E. Beam, "Thermal properties and thermal instabilities of InP-based heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 43, no. 3, pp. 388-395, Mar. 1996. (Pubitemid 126768137)