Review on physically flexible nonvolatile memory for internet of everything electronics

Electronics (Switzerland)

Volumn 4, Issue 3, 2015, Pages 424-479

  Ghoneim, Mohamed T ^a   Hussain, Muhammad M ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

CMOS; Ferroelectric; Flash; Flexible electronics; Inorganic; Memristor; Nonvolatile memory; Phase change memory; Random access memory (RAM); Reliability; Resistive; Silicon; Transistor

Indexed keywords

EID: 84945946077     PISSN: None     EISSN: 20799292     Source Type: Journal    
DOI: 10.3390/electronics4030424     Document Type: Review

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