High-performance flexible Ni Sm2 O3 ITO ReRAM device for low-power nonvolatile memory applications

IEEE Electron Device Letters

Volumn 34, Issue 9, 2013, Pages 1145-1147

  Mondal, Somnath ^a   Chueh, Ching Hao ^a   Pan, Tung Ming ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Flexible memory; indium tin oxide (ITO); resistive random access memory (ReRAM); Sm2 O3

Indexed keywords

FLEXIBLE MEMORY; INDIUM TIN OXIDE; LOW ENERGY ELECTRONS; NON-VOLATILE MEMORY; NON-VOLATILE MEMORY APPLICATION; ON/OFF CURRENT RATIO; RESISTIVE RANDOM ACCESS MEMORY (RERAM); SWITCHING OPERATIONS;

C (PROGRAMMING LANGUAGE); ELECTRONS; NONVOLATILE STORAGE; TIN;

NICKEL;

EID: 84883150891     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2272455     Document Type: Article

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