Nonvolatile memory devices based on organic field-effect transistors

Chinese Science Bulletin

Volumn 56, Issue 13, 2011, Pages 1325-1332

  Wang, Hong ^a,b   Peng, Ying Quan ^a   Ji, Zhuo Yu ^b   Liu, Ming ^b   Shang, Li Wei ^b   Liu, Xing Hua ^b  

^a LANZHOU UNIVERSITY   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

ferroelectric; floating gate; organic electret; organic field effect transistors; organic nonvolatile memory

Indexed keywords

EID: 79955151782     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-010-4240-y     Document Type: Review

References (51)

1. Di C A, Yu G, Liu Y Q, et al. High-performance organic field-effect transistors: Molecular design, device fabrication, and physical properties. J Phys Chem B, 2007, 111: 14083-14096.
2. Klauk H, Zschieschang U, Pflaum J, et al. Ultralow-power organic complementary circuits. Nature, 2007, 445: 745-748.
3. Moran I W, Briseno A L, Loser S, et al. Device fabrication by easy soft imprint nano-lithography. Chem Mater, 2008, 20: 4595-4608.
4. Zschiesching U, Klauk H, Halik H, et al. Flexible organic circuits with printed gate electrodes. Adv Mater, 2003, 15: 1147-1152.
5. Wang H, Ji Z Y, Liu M, et al. Advances in organic field-effect transistors and integrated circuits. Sci China Ser E-Tech Sci, 2009, 52: 3105-3116.
6. Ribierre J C, Watanabe S, Matsumoto M, et al. Majority carrier type conversion in solution-processed organic transistors and flexible complementary logic circuits. Appl Phys Lett, 2010, 96: 083303-083305.
7. 60 organic field-effect transistors with high mobility and low contact resistance. Appl Phys Lett, 2008, 93: 133305-133307.
8. Ju S H, Li J H, Liu J, et al. Transparent active matrix organic light-emitting diode displays driven by nanowire transistor Circuitry. Nano Lett, 2008, 8: 997-1004.
9. Feng Y, Ju X, Feng W, et al. Organic solar cells using few-walled carbon nanotubes electrode controlled by the balance between sheet resistance and the transparency. Appl Phys Lett, 2009, 94: 123303-123305.
10. Roberts M, Mannsfeld S, Stoltenberg R, et al. Flexible, plastic transistor-based chemical sensors. Organic Electronics, 2009, 10: 377-383.
11. Hamilton M, Kanicki J. Organic polymer thin-film transistor photosensors. IEEE J Select Topics Quantum Electron, 2004, 10: 840-848.
12. Lee P, Chang T, Chen S. Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq3 thin film. Org Electron, 2008, 9: 916-920.
13. Lin J, Ma D. Realization of negative differential resistance and switching devices based on copper phthalocyanine by the control of evaporation rate. Org Electron, 2009, 10: 275-279.
14. Liu X, Ji Z, Tu D, et al. Organic nonpolar nonvolatile resistive switching in poly(3, 4-ethylene-dioxythiophene): polystyrenesulfonate thin film. Org Electron, 2009, 10: 1191-1194.
15. Tsujioka T, Shimizu M, Ishihara E. Organic bistable memory characteristics with a photochromic diarylethene layer. Appl Phys Lett, 2005, 87: 213506-213508.
16. 3 nanocrystal as a charge trapping center. Org Electron, 2009, 10: 48-52.
17. Möller S, Perlov C, Jackson W, et al. A polymer/semiconductor write-once read-many-times memory. Nature, 2003, 426: 166-168.
18. Baeg K, Noh Y, Sirringhaus H, et al. Controllable shifts in threshold voltage of top-gate polymer field-effect transistors for applications in organic nano floating gate memory. Adv Funct Mater, 2010, 20: 224-230.
19. Baeg K, Noh Y, Ghim J, et al. Organic nonvolatile memory based on pentacene field-effect transistors using a polymeric gate electret. Adv Mater, 2006, 18: 3179-3183.
20. Sekitani T, Yokota T, Zschieschang U, et al. Organic nonvolatile memory transistors for flexible sensor arrays. Science, 2009, 326: 1516-1519.
21. Guo Y, Di C, Ye S, et al. Multibit storage of organic thin-film field-effect transistors. Adv Mater, 2009, 21: 1954-1959.
22. Bez R, Camerlenghi E, Modelli A, et al. Introduction to flash memory. Proc IEEE, 2003, 91: 489-502.
23. Liu Z, Xue F, Su Y, et al. Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric. IEEE Trans Nanotechnol, 2006, 5: 379-384.
24. Kim S, Park Y, Lyu S, et al. Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers. Appl Phys Lett, 2010, 96: 033302-033304.
25. Zhen L, Guan W, Shang L, et al. Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric. J Phys D: Appl Phys, 2008, 41: 135111-135115.
26. Chang M, Lee P, McAlister S, et al. A flexible organic pentacene nonvolatile memory based on high-k dielectric layers. Appl Phys Lett, 2008, 93: 233302-233304.
27. Wang W, Shi J, Ma D. Organic thin-film transistor memory with nanoparticle floating gate. IEEE Trans Electron Devices, 2009, 56: 1036-1039.
28. Singh T, Marjanovic N, Matt G, et al. Nonvolatile organic field-effect transistor memory element with a polymeric gate electret. Appl Phys Lett, 2004, 85: 5409-5411.
29. Wu W, Zhang H, Wang Y, et al. High performance organic transistor memory elements with steep flanks of hysteresis. Adv Funct Mater, 2008, 18: 2593-2601.
30. Lai S. Flash memories: Where we were and where we are going. IEDM Tech Dig, 1998, 971-973.
31. Eitan B, Eitan P, Bloom I. NROM: A novel localized trapping, 2-bit nonvolatile memory cell. IEEE Electron Device Lett, 2000, 21: 543-545.
32. Velu G, Legrand C, Tharaud O. Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator. Appl Phys Lett, 2001, 79: 659-661.
33. Schroeder R, Majewski L, Grell M. All organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator. Adv Mater, 2004, 16: 633-636.
34. Naber R, Tanase C, Blom P, et al. High-performance solution-processed polymer ferroelectric field-effect transistors. Nat Mater, 2005, 4: 243-248.
35. Naber R, Blom P, Gelinck G, et al. An organic field-effect transistor with programmable polarity. Adv Mater, 2005, 17: 2692-2695.
36. Gelinck G, Marsman A, Touwslager F, et al. All-polymer ferroelectric transistors. Appl Phys Lett, 2005, 87: 092903-092905.
37. Stadlober B, Zirkl M, Beutl M, et al. High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric. Appl Phys Lett, 2005, 86: 242902-242904.
38. Nguyen C, Lee P, Ng N, et al. Anomalous polarization switching in organic ferroelectric field effect transistors. Appl Phys Lett, 2007, 91: 042909-042911.
39. Lee K, Lee G, Lee K, et al. Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer. Appl Phys Lett, 2009, 94: 093304-093306.
40. Yildirim F, Ucurum C, Schliewe R, et al. Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors. Appl Phys Lett, 2007, 90: 083501-083503.
41. Müller K, Henkel K, Paloumpa I, et al. Organic field effect transistors with ferroelectric hysteresis. Thin Solid Films, 2007, 515: 7683-7687.
42. Schroeder R, Majewski L, Voigt M, et al. Memory performance and retention of an all organic ferroelectric-like memory transistor. IEEE Electron Device Lett, 2005, 26: 69-71.
43. Tamura R, Lim E, Yoshita S, et al. Analysis of threshold voltage shift of pentacene field effect transistor with ferroelectric gate insulator as a Maxwell-Wagner effect. Thin Solid Films, 2008, 516: 2753-2757.
44. Nguyen C, Lee P, Mhaisalkar S. Investigation of turn-on voltage shift in organic ferroelectric transistor with high polarity gate dielectric. Org Electron, 2007, 8: 415-422.
45. Nguyen C, Mhaisalkar S, Ma J, et al. Enhanced organic ferroelectric field effect transistor characteristics with strained poly(Vinylidene fluoride-trifluoroethylene) dielectric. Org Electron, 2008, 9: 1087-1092.
46. Xiong S, Sakai S, Ishii K, et al. Memory properties of a ferroelectric gate field-effect transistor with an adjoining metal-ferroelectric-metal assistance cell. J Appl Phys, 2003, 94: 2559-2562.
47. 2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors. Appl Phys Lett, 2004, 85: 3199-3201.
48. Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Appl Phys Lett, 2007, 90: 013501-013503.
49. Guo Y, Liu Y, Di C, et al. Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors. Appl Phys Lett, 2007, 91: 263502-263504.
50. Novembre C, Guérin D, Lmimouni K, et al. Gold nanoparticle-pentacene memory transistors. Appl Phys Lett, 2008, 92: 103314-103316.
51. Mabrook M, Yun Y, Pearson C, et al. A pentacene-based organic thin film memory transistor. Appl Phys Lett, 2009, 94: 173302-173304.