Flexible graphene-PZT ferroelectric nonvolatile memory

Nanotechnology

Volumn 24, Issue 47, 2013, Pages

  Lee, Wonho ^a   Kahya, Orhan ^b,c   Toh, Chee Tat ^b,c   Özyilmaz, Barbaros ^b,c   Ahn, Jong Hyun ^a  

^a Yonsei University   (South Korea)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c National University of Singapore   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI FERROELECTRICS; ELECTROLYTE SOLUTIONS; FERROELECTRIC LAYERS; NON-VOLATILE MEMORY; NONVOLATILE MEMORY DEVICES; ON/OFF CURRENT RATIO; PLASTIC SUBSTRATES; REMNANT POLARIZATIONS;

BENDING TESTS; CHEMICAL VAPOR DEPOSITION; FERROELECTRIC FILMS; FERROELECTRICITY; FLEXIBLE ELECTRONICS; GRAPHENE; LEAD; MECHANICAL PROPERTIES; NONVOLATILE STORAGE; SOL-GEL PROCESS; SUBSTRATES;

FERROELECTRIC MATERIALS;

EID: 84887584383     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/47/475202     Document Type: Article

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