IGZO TFT-based all-enhancement operational amplifier bent to a radius of 5 mm

IEEE Electron Device Letters

Volumn 34, Issue 11, 2013, Pages 1394-1396

  Zysset, Christoph ^a   Munzenrieder, Niko ^a   Petti, Luisa ^a   Buthe, Lars ^a   Salvatore, Giovanni A ^a   Troster, Gerhard ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Analog circuits; indium gallium zinc oxide (IGZO); operational amplifiers; thin film circuits; thin film transistors (TFTs)

Indexed keywords

COMMON-MODE REJECTION RATIOS; FLEXIBLE POLYIMIDE SUBSTRATE; INDIUM GALLIUM ZINC OXIDES (IGZO); MECHANICAL FLEXIBILITY; OPEN-LOOP VOLTAGE; THIN-FILM TRANSISTOR (TFTS); UNITY-GAIN FREQUENCIES;

ANALOG CIRCUITS; GALLIUM; GALLIUM ALLOYS; INDIUM; OPERATIONAL AMPLIFIERS; THIN FILM CIRCUITS; ZINC;

THIN FILM TRANSISTORS;

EID: 84887234218     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2280024     Document Type: Article

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