Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Shahrjerdi, D ^a   Bedell, S W ^a   Khakifirooz, A ^b   Fogel, K ^a   Lauro, P ^a   Cheng, K ^b   Ott, J A ^a   Gaynes, M ^a   Sadana, D K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS CIRCUITS; CONTACTED GATE PITCH; FLEXIBLE CIRCUIT; FLEXIBLE DEVICE; GATE LENGTH; LAYER TRANSFER; RING OSCILLATOR; SILICON SUBSTRATES;

DELAY CIRCUITS; ELECTRON DEVICES; SPALLING; STATIC RANDOM ACCESS STORAGE;

CMOS INTEGRATED CIRCUITS;

EID: 84876138326     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6478981     Document Type: Conference Paper

References (6)

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3. H. Y. Li, et al., "Bdability of single-crystal Si MOSFETs investigated on flexible substrate", IEEE Electron Device Lett., vol. 27, p. 538, 2006.
4. M. Zimmermann, et al., "A seamless ultra-thin chip fabrication and assembly process" IEDM Tech. Digest, p. 1010, 2006.
5. K. Cheng, et al., " Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications" IEDM Tech. Digest, p. 49, 2009.
6. S. W. Bedell, et al.,"Kerf-less removal of Si, Ge, and III-V layers by controlled spalling to enable low-cost PV technologies", IEEE J. Photovoltaics, vol. 2, p. 141, 2012.