Tunable charge-trap memory based on few-layer MoS2

ACS Nano

Volumn 9, Issue 1, 2015, Pages 612-619

  Zhang, Enze ^a   Wang, Weiyi ^a   Zhang, Cheng ^a   Jin, Yibo ^a   Zhu, Guodong ^a   Sun, Qingqing ^a   Zhang, David Wei ^a   Zhou, Peng ^a   Xiu, Faxian ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

charge trap memory; dual gate; memory characteristics; memory window; MoS2

Indexed keywords

CHARGE TRAPPING; DIELECTRIC MATERIALS; ELECTRON DEVICES; GRAPHENE; HAFNIUM OXIDES; LOGIC GATES; MOLYBDENUM COMPOUNDS; NONVOLATILE STORAGE;

CHARGE TRAP; DUAL GATES; ELECTRONS AND HOLES; MEMORY WINDOW; MOS2; NONVOLATILE MEMORY DEVICES; THREEDIMENSIONAL (3-D); TWO DIMENSIONAL (2 D);

FLASH MEMORY;

EID: 84921809091     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5059419     Document Type: Article

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