Erratum: High-performance flexible thin-film transistors exfoliated from bulk wafer (Nano Letters (2012) 12:11 (5609-5615) DOI:10.1021/nl302735f);High-performance flexible thin-film transistors exfoliated from bulk wafer

Nano Letters

Volumn 12, Issue 11, 2012, Pages 5609-5615

  Zhai, Yujia ^a   Mathew, Leo ^b   Rao, Rajesh ^b   Xu, Dewei ^b   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b AstroWatt Inc   (United States)

Author keywords

3D IC; exfoliation; Flexible electronics; silicon thin film; thin film transistors; Through Silicon Vias

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRONICS PACKAGING; FIELD EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; INTEGRATED CIRCUIT INTERCONNECTS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON WAFERS; THIN FILM TRANSISTORS; THIN FILMS; THREE DIMENSIONAL INTEGRATED CIRCUITS;

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS; ELECTRICAL PERFORMANCE; EXFOLIATION; INTEGRATED CIRCUITS (ICS); SHORT CHANNEL MOSFETS; SILICON THIN FILM; THREEDIMENSIONAL (3-D); THROUGH SILICON VIAS;

THIN FILM CIRCUITS;

EID: 84869169278     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl304593r     Document Type: Erratum

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