SCOPUS 정보 검색 플랫폼

Volumn 23, Issue 14, 2013, Pages 1750-1758

High-Speed, low-voltage, and environmentally stable operation of electrochemically gated zinc oxide nanowire field-effect transistors

(6) Nasr, Babak a,b Wang, Di a Kruk, Robert a Rösner, Harald c Hahn, Horst a,b,d Dasgupta, Subho a

a KARLSRUHE INSTITUTE OF TECHNOLOGY (Germany)

b DARMSTADT UNIVERSITY OF TECHNOLOGY (Germany)

c UNIVERSITY OF MÜNSTER (Germany)

d KARLSRUHE INSTITUTE OF TECHNOLOGY (Germany)

Author keywords

field effect transistors; flexible electronics; nanodevices; nanowires; zinc oxide

Indexed keywords

ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE DISPLAYS; ELECTRONIC TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTOR (FETS); FIELD-EFFECT MOBILITIES; HIGH-THROUGHPUT TECHNIQUE; NANO-DEVICES; SOLID POLYMER ELECTROLYTES; TRANSISTOR GEOMETRIES;

DISPLAY DEVICES; FIELD EFFECT TRANSISTORS; FLEXIBLE DISPLAYS; FLEXIBLE ELECTRONICS; ORGANIC LIGHT EMITTING DIODES (OLED); POLYELECTROLYTES; POLYMERS; TRANSPORT PROPERTIES; ZINC OXIDE;

NANOWIRES;

EID: 84875861837 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201202500 Document Type: Article

Times cited : (90)

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