Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

IEEE Transactions on Reliability

Volumn 64, Issue 2, 2015, Pages 579-585

  Ghoneim, Mohamed T ^a   Rojas, Jhonathan P ^a   Young, Chadwin D ^b   Bersuker, Gennadi ^c   Hussain, Muhammad M ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b The University of Texas at Dallas   (United States)

^c SEMATECH   (United States)

Author keywords

Flexible; lifetime projection; metal oxide semiconductor capacitors; time dependent dielectric breakdown; voltage breakdown; Weibull distribution

Indexed keywords

CAPACITORS; CHARGE COUPLED DEVICES; CRYSTALLINE MATERIALS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; METALLIC COMPOUNDS; METALS; MOS DEVICES; SEMICONDUCTING SILICON; SILICON; SILICON WAFERS; TRANSISTORS; WEIBULL DISTRIBUTION;

FLEXIBLE; LIFETIME PROJECTION; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; TIME DEPENDENT DIELECTRIC BREAKDOWN; VOLTAGE BREAKDOWN;

MONOCRYSTALLINE SILICON;

EID: 84964017663     PISSN: 00189529     EISSN: None     Source Type: Journal    
DOI: 10.1109/TR.2014.2371054     Document Type: Article

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