A journey towards reliability improvement of TiO2 based Resistive Random Access Memory: A review

Microelectronics Reliability

Volumn 54, Issue 3, 2014, Pages 541-560

  Acharyya, D ^a   Hazra, A ^a   Bhattacharyya, P ^a  

^a INDIAN INSTITUTE OF ENGINEERING SCIENCE AND TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH DIELECTRIC CONSTANTS; HIGH TEMPERATURE STABILITY; MATERIAL PREPARATION; RELIABILITY IMPROVEMENT; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); SEMICONDUCTING OXIDE; SWITCHING PERFORMANCE;

TITANIUM DIOXIDE;

RANDOM ACCESS STORAGE;

EID: 84896722211     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2013.11.013     Document Type: Review

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