Air-stable, non-volatile resistive memory based on hybrid organic/inorganic nanocomposites

Organic Electronics

Volumn 18, Issue , 2015, Pages 17-23

  Casula, Giulia ^a   Cosseddu, Piero ^b   Busby, Yan ^c   Pireaux, Jean Jacques ^c   Rosowski, Marcin ^d   Tkacz Szczesna, Beata ^d   Soliwoda, Katarzyna ^d   Celichowski, Grzegorz ^d   Grobelny, Jaroslaw ^d   Novák, Jiří ^e,f   Banerjee, Rupak ^f   Schreiber, Frank ^f   Bonfiglio, Annalisa ^a  

^a UNIVERSITY OF CAGLIARI   (Italy)

^b CNR   (Italy)

^c UNIVERSITY OF NAMUR   (Belgium)

^d UNIVERSITY OF LODZ   (Poland)

^e MASARYK UNIVERSITY   (Czech Republic)

^f UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

Filamentary conduction; Metal nanoparticles; Organic memories; Resistive switching

Indexed keywords

DIGITAL STORAGE; METAL NANOPARTICLES; SECONDARY ION MASS SPECTROMETRY;

AMBIENT CONDITIONS; DRIVING MECHANISM; FILAMENTARY CONDUCTION; METALLIC FILAMENTS; NON-VOLATILE MEMORY; ORGANIC MEMORY; ORGANIC/INORGANIC NANO-COMPOSITE; RESISTIVE SWITCHING;

NANOCOMPOSITES;

EID: 84921038533     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2015.01.001     Document Type: Article

References (37)

1. Y. Vaynzof, D. Kabra, T.J.K. Brenner, H. Sirringhaus, and R.H. Friend Recent advances in hybrid optoelectronics Isr. J. Chem. 52 2012 496
2. S. Gunes, H. Neugebauer, and N.S. Sariciftici Conjugated polymer-based organic solar cells Chem. Rev. 107 2007 1324 1338
3. L. Kergoat, B. Piro, M. Berggren, G. Horowitz, and M.-C. Phan Advances in organic transistor-based biosensors: from organic electrochemical transistors to electrolyte-gated organic field-effect transistors Anal. Bioanal. Chem. 402 2012 1813 1826
4. P. Lin, and F. Yan Organic thin-film transistors for chemical and biological sensing Adv. Mater. 24 2012 34 51
5. S.R. Forrest The path to ubiquitous and low-cost organic electronic appliances on plastic Nature 428 2004 911 918
6. H. Klauk, U. Zschieschang, J. Pflaum, and M. Halik Ultralow-power organic complementary circuits Nature 445 2007 745 748
7. T. Sekitani, Y. Noguchi, U. Zschieschang, H. Klauk, and T. Someya Organic transistors manufactured using inkjet technology with subfemtoliter accuracy Proc. Natl. Acad. Sci. U.S.A. 105 2008 4976 4980
8. S.I. Na, S.-S. Kim, J. Jo, and D.-Y. Kim Efficient and flexible ITO-free organic solar cells using highly conductive polymer anodes Adv. Mater. 20 2008 4061 4067
9. T. Sekitani, H. Nakajima, H. Maeda, T. Fukusima, T. Aida, K. Hata, and T. Someya Stretchable active-matrix organic light-emitting diode display using printable elastic conductors Nat. Mater. 8 2009 494 499
10. H. Yan, Z. Chen, Y. Zheng, C. Newman, J.R. Quinn, F. Dotz, M. Kastler, and A. Facchetti A high-mobility electron-transporting polymer for printed transistors Nature 457 2009 679 686
11. D. Prime, and S. Paul Overview of organic memory devices Philos. Trans. R. Soc. A 367 2009 4141 4157
12. R.C.G. Naber, K. Asadi, P.W.M. Blom, D.M. de Leeuw, and B. de Boer Organic nonvolatile memory devices based on ferroelectricity Adv. Mater. 22 2010 933 945
13. T. Sekitani, T. Yokota, U. Zschieschang, H. Klauk, S. Bauer, K. Takeuchi, M. Takamiya, T. Sakurai, and T. Someya Organic nonvolatile memory transistors for flexible sensor arrays Science 326 2009 1516 1519
14. R. Waser, and M. Aono Nanoionics-based resistive switching memories Nat. Mater. 6 2007 833 840
15. J.C. Scott, and L.D. Bozano Nonvolatile memory elements based on organic materials Adv. Mater. 19 2007 1452 1463
16. B. Cho, S. Song, Y. Ji, T.-W. Kim, and T. Lee Organic resistive memory devices: performance enhancement, integration, and advanced architectures Adv. Funct. Mater. 21 2011 2806 2829
17. T. Lee, and Y. Chen Resistive switching phenomena in thin films: materials, devices, and applications MRS Bull. 27 2012 144 149
18. L.P. Ma, J. Liu, and Y. Yang Organic electrical bistable devices and rewritable memory cells Appl. Phys. Lett. 80 2002 2997 2999
19. L.P. Ma, S.M. Pyo, J.Y. Ouyang, Q.F. Xu, and Y. Yang Nonvolatile electrical bistability of organic/metal-nanocluster/organic system Appl. Phys. Lett. 82 2003 1419 1421
20. J. Ouyang, C.-W. Chu, C.R. Szmanda, L. Ma, and Y. Yang Programmable polymer thin film and non-volatile memory device Nat. Mater. 3 2004 918 922
21. C.-W. Chu, J. Ouyang, J.H. Tseng, and Y. Yang Organic donor-acceptor system exhibiting electrical bistability for use in memory devices Adv. Mater. 17 2005 1440 1443
22. R.J. Tseng, J. Huang, J. Ouyang, R.B. Kaner, and Y. Yang Polyaniline nanofiber/gold nanoparticle nonvolatile memory Nano Lett. 5 2005 1077 1080
23. Y. Yang, J.Y. Ouyang, L.P. Ma, R.J.-H. Tseng, and C.-W. Chu Electrical switching and bistability in organic/polymeric thin films and memory devices Adv. Funct. Mater. 16 2006 1001 1014
24. L.D. Bozano, B.W. Kean, V.R. Deline, J.R. Salem, and J.C. Scott Mechanism for bistability in organic memory elements Appl. Phys. Lett. 84 2004 607 609
25. L.D. Bozano, B.W. Kean, M. Beinhoff, K.R. Carter, P.M. Rice, and J.C. Scott Organic materials and thin-film structures for cross-point memory cells based on trapping in metallic nanoparticles Adv. Funct. Mater. 15 2005 1933 1939
26. 3 structures for organic bistable memory devices Org. Electron. 10 2009 138 144
27. 3/Al structure IEEE Electron. Dev. Lett. 32 2011 1140 1142
28. H. Jo, J. Ko, J.A. Lim, H.J. Chang, and Y.S. Kim Organic nonvolatile resistive switching memory based on molecularly entrapped fullerene derivative within a diblock copolymer nanostructure Macromol. Rapid Commun. 34 2013 355 361
29. T.-W. Kim, S.-H. Oh, H. Choi, G. Wang, D.-Y. Kim, H. Hwang, and T. Lee Effect of Ag nanoparticles on resistive switching of polyfluorene-based organic non-volatile memory devices J. Korean Phys. Soc. 56 2010 128 132
30. D.I. Son, T.W. Kim, J.H. Shim, J.H. Jung, D.U. Lee, J.M. Lee, W. Il Park, and W.K. Choi Flexible organic bistable devices based on graphene embedded in an insulating poly(methyl mathacrylate) polymer layer Nano Lett. 10 2010 2441 2447
31. S.K. Hwang, J.M. Lee, S. Kim, J.S. Park, H. Il Park, C.W. Ahn, K.J. Lee, T. Lee, and S.O. Kim Flexible resistive memory with controlled charge trap B- and N-doped carbon nanotubes Nano Lett. 12 2012 2217 2221
32. K. Soliwoda, E. Tomaszewska, B. Tkacz-Szczesna, E. Mackiewicz, M. Rosowski, A. Bald, C. Blanck, M. Schmutz, J. Novak, F. Schreiber, G. Celichowski, and J. Grobelny Effect of the alkyl chain length of secondary amines on the phase transfer of gold nanoparticles from water to toluene Langmuir 30 2014 6684 6693
33. S. Nau, S. Sax, and E.J.W. List-Kratochvill Unravelling the nature of unipolar resistance switching in organic devices by utilizing the photovoltaic effect Adv. Mater. 26 2014 2508 2513
34. Y.T. You, Q. Zeng, Y. Yao, M.L. Wang, B. Wu, Y. He, Y.M. Hu, C.Q. Wu, and X.Y. Hou Field-induced evolution of metallic nano-tips in indium tin oxide-tris-(8-hydroxyquinoline) aluminum-aluminum device Appl. Phys. Lett. 100 2012 123304
35. Y. Busby, and J.J. Pireaux Metal nanoparticle size distribution in hybrid organic/inorganic films determined by high resolution X-ray photoelectron spectroscopy J. Electron. Spectrosc. Relat. Phenomena 192 2014 13 18
36. 2-based ReRAM with a Cu nanocrystal insertion layer Electron. Dev. Lett., IEEE 31 2010 1299 1301
37. Q. Liu, S. Long, H. Lv, W. Wang, J. Niu, Z. Huo, J. Chen, and M. Liu Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode ACS Nano 4 2010 6162 6168