New highly scalable 3 dimensional chain FeRAM cell with vertical capacitor

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 146-147

  Nagel N ^b   Bruchhaus, R ^b   Hornik, K ^b   Egger, U ^b   Zhuang, H ^b   Joachim, H O ^b   Rohr T ^b   Beitel, G ^b   Ozaki, T ^a   Kunishima, I ^a  

^a TOSHIBA CORPORATION   (Japan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ASPECT RATIO; CAPACITORS; CHEMICAL MECHANICAL POLISHING; COMPUTER SIMULATION; ELECTRODEPOSITION; FERROELECTRIC MATERIALS; HYSTERESIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING;

FERROELECTRIC RANDOM ACCESS MEMORIES (FERAM) CELLS; HARDMASK ETCHING; HYDROGEN BARRIERS; VERTICAL CAPACITORS;

RANDOM ACCESS STORAGE;

EID: 4544302440     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.2004.1345444     Document Type: Conference Paper

References (4)

1. D. Takashima et.al.: VLSI Circuits, pp. 83, (1997)
2. N. Nagel et. al.: Int. Ferroelectrics, Vol.48, pp. 127 (2002)
3. T. Ozaki et. al.: SSDM Extended Abstracts, pp. 646 (2003)
4. F. Schnabel et. al.: VLSI Technology Taiwan, pp. 264 (2001)