Highly reliable M1X MLC NAND flash memory cell with novel active air-gap and p+ poly process integration technologies

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2013, Pages

  Seo, Jihyun ^a   Han, Kyoungrok ^a   Youn, Taeun ^a   Heo, Hye Eun ^a   Jang, Sanghyun ^a   Kim, Jongwook ^a   Yoo, Honam ^a   Hwang, Joowon ^a   Yang, Cheolhoon ^a   Lee, Heeyoul ^a   Kim, Byungkook ^a   Choi, Eunseok ^a   Noh, Keumhwan ^a   Lee, Byoungki ^a   Lee, Byungseok ^a   Chang, Heehyun ^a   Park, Sungkye ^a   Ahn, Kunok ^a   Lee, Seokkiu ^a   Kim, Jinwoong ^a   Lee, Seokhee ^a   more..

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894306646     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2013.6724554     Document Type: Conference Paper

References (3)

1. J. Hwang, et al., "A Middle-1X nm NAND flash memory cell (M1XNAND) with highly manufacturable integration technologies", IEEE IEDM Technical Digest, pp. 199-202, 2011.
2. S. Lee, "Scaling challenges in NAND flash device toward 10nm technology", IEEE International Memory Workshop, pp. 6-9, 2012.
3. C. Lee, et al., "Physical modeling and analysis on improved endurance behavior of p-type floating gate NAND flash memory", IEEE International Memory Workshop, pp. 80-83, 2012.