The missing memristor found

Nature

Volumn 453, Issue 7191, 2008, Pages 80-83

  Strukov, Dmitri B ^a   Snider, Gregory S ^a   Stewart, Duncan R ^a   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TITANIUM DIOXIDE;

ELECTRONIC EQUIPMENT; TITANIUM;

ARTICLE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRICITY; ELECTRONICS; ION TRANSPORT; MODEL; MOTION; NANOANALYSIS; PRIORITY JOURNAL; SOLID STATE;

EID: 43049126833     PISSN: 00280836     EISSN: 14764679     Source Type: Journal    
DOI: 10.1038/nature06932     Document Type: Article

References (26)

1. Chua, L. O. Memristor - the missing circuit element. IEEE Trans. Circuit Theory 18, 507-519 (1971).
2. Hickmott, M. T. Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys. 33, 2669-2682 (1962).
3. Dearnaley, G., Stoneham, A. M. & Morgan, D. V. Electrical phenomena in amorphous oxide films. Rep. Prog. Phys. 33, 1129-1192 (1970).
4. Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nature Mater. 6, 833-840 (2007).
5. Scott, J. C. & Bozano, L. D. Nonvolatile memory elements based on organic materials. Adv. Mater. 19, 1452-1463 (2007).
6. Collier, C. P. et al. A [2]catenane-based solid state electronically reconfigurable switch. Science 289, 1172-1175 (2000).
7. Zhitenev, N. B., Sidorenko, A., Tennant, D. M. & Cirelli, R. A. Chemical modification of the electronic conducting states in polymer nanodevices. Nature Nanotechnol. 2, 237-242 (2007).
8. Smits, J. H. A., Meskers, S. C. J., Janssen, R. A. J., Marsman, A. W. & de Leeuw, D. M. Electrically rewritable memory cells from poly(3-hexylthiophene) Schottky diodes. Adv. Mater. 17, 1169-1173 (2005).
9. Lai, Q. X., Zhu, Z. H., Chen, Y., Patil, S. & Wudl, F. Organic nonvolatile memory by dopant-configurable polymer. Appl. Phys. Lett. 88, 133515 (2006).
10. Terabe, K., Hasegawa, T., Nakayama, T. & Aono, M. Quantized conductance atomic switch. Nature 433, 47-50 (2005).
11. Kozicki, M. N., Park, M. & Mitkova, M. Nanoscale memory elements based on solid-state electrolytes. IEEE Trans. Nanotechnol. 4, 331-338 (2005).
12. Dietrich, S. et al. A nonvolatile 2-Mbit CBRAM memory core featuring advanced read and program control. IEEE J. Solid State Circuits 42, 839-845 (2007).
13. 2 crystals. Appl. Phys. Lett. 91, 112101 (2007).
14. 2/Pt stack. Electrochem. Solid State Lett. 10, G51-G53 (2007).
15. Beck, A., Bednorz, J. G., Gerber, C., Rossel, C. & Widmer, D. Reproducible switching effect in thin oxide films for memory applications. Appl. Phys. Lett. 77, 139-141 (2000).
16. 3. Nature Mater. 5, 312-320 (2006).
17. Sawa, A., Fujii, T., Kawasaki, M. & Tokura, Y. Interface resistance switching at a few nanometer thick perovskite manganite active layers. Appl. Phys. Lett. 88, 232112 (2006).
18. Hamaguchi, M., Aoyama, K., Asanuma, S., Uesu, Y. & Katsufuji, T. Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films. Appl. Phys. Lett. 88, 142508 (2006).
19. 3 thin films. Appl. Phys. Lett. 88, 042901 (2006).
20. x/molecule/Ti/Al devices. Appl. Phys. Mater. Sci. Process. 80, 1355-1362 (2005).
21. Stewart, D. R. et al. Molecule-independent electrical switching in Pt/organic monolayer/Ti devices. Nano Lett. 4, 133-136 (2004).
22. 2 by Ti evaporation onto an interceding organic monolayer. J. Phys. Chem. C 111, 16-20 (2007).
23. Chua, L. O.&Kang, S. M. Memristive devices and systems. Proc. IEEE 64, 209-223 (1976).
24. Kuekes, P. J., Snider, G. S. & Williams, R. S. Crossbar nanocomputers. Sci. Am. 293, 72-78 (2005).
25. Strukov, D. B. & Likharev, K. K. Defect-tolerant architectures for nanoelectronic crossbar memories. J. Nanosci. Nanotechnol. 7, 151-167 (2007).
26. Blanc, J. & Staebler, D. L. Electrocoloration in SrTiO - vacancy drift and oxidation-reduction of transition metals. Phys. Rev. B 4, 3548-3557 (1971).