PbZrxTi1-xO3 ferroelectric thin-film capacitors for flexible nonvolatile memory applications

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 1017-1019

  Rho, Jonghyun ^a   Kim, Sang Jin ^b   Heo, Wook ^a   Lee, Nae Eung ^a   Lee, Hwan Soo ^b   Ahn, Jong Hyun ^a  

^a Sungkyunkwan University   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

Ferroelectric; flexible electronics; nonvolatile memory; PZT

Indexed keywords

BENDING RADIUS; ELASTOMERIC STAMPS; FERROELECTRIC; FERROELECTRIC THIN-FILM CAPACITORS; FLEXIBLE ELECTRONIC SYSTEMS; FLEXIBLE PLASTIC SUBSTRATES; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; PLASTIC SUBSTRATES; PZT; PZT FILM; SATURATED HYSTERESIS LOOPS; SOL-GEL METHODS; STABLE OPERATION; THIN-FILM CAPACITORS;

CAPACITORS; FERROELECTRICITY; HYSTERESIS; PLASTICS; SUBSTRATES; THIN FILM CIRCUITS;

FLEXIBLE ELECTRONICS;

EID: 77956180968     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2053344     Document Type: Article

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