Deterministic assembly of releasable single crystal silicon-metal oxide field-effect devices formed from bulk wafers

Applied Physics Letters

Volumn 102, Issue 18, 2013, Pages

  Kim, Tae Il ^a,b   Hwan Jung, Yei ^a,e   Chung, Hyun Joong ^a,c   Jun Yu, Ki ^a   Ahmed, Numair ^d   Corcoran, Christopher J ^d   Suk Park, Jae ^a   Hun Jin, Sung ^a   Rogers, John A ^a,d  

^a University of Illinois at Urbana Champaign   (United States)

^b Sungkyunkwan University   (South Korea)

^c UNIVERSITY OF ALBERTA   (Canada)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^e University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING STIFFNESS; BENEFICIAL EFFECTS; DEVICE PARAMETERS; FIELD-EFFECT DEVICES; OXIDE SEMICONDUCTOR; PASSIVATION LAYER; THICKNESS REGIME; ULTRA-THIN METALS;

GATE DIELECTRICS; METALLIC COMPOUNDS; SILICA;

SILICON WAFERS;

EID: 84877741536     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804139     Document Type: Article

References (27)

1. S.-W. Hwang, H. Tao, D.-H. Kim, H. Cheng, J.-K. Song, E. Rill, M. A. Brenckle, B. Panilaitis, S. M. Won, Y.-S. Kim, Y. M. Song, K. J. Yu, A. Ameen, R. Li, Y. Su, M. Yang, D. L. Kaplan, M. R. Zakin, M. J. Slepian, Y. Huang, F. G. Omenetto, and J. A. Rogers, Science 337, 1640 (2012). 10.1126/science.1226325
2. T. Sekitani and T. Someya, MRS Bull. 37, 236 (2012). 10.1557/mrs.2012.42
3. S. C. B. Mannsfeld, B. C. K. Tee, R. Stoltenberg, C. V. H. H. Chen, S. Barmann, B. V. O. Muir, A. N. Sokolov, C. Reese, and Z. Bao, Nat. Mater. 9, 859 (2010). 10.1038/nmat2834
4. C. Pang, G.-Y. Lee, T.-i. Kim, S. M. Kim, H. N. Kim, S.-H. Ahn, and K.-Y. Suh, Nat. Mater. 11, 795 (2012). 10.1038/nmat3380
5. K. Takei, T. Takahashi, J. C. Ho, H. Ko, A. G. Gillies, P. W. Leu, R. S. Fearing, and A. Javey, Nat. Mater. 9, 821 (2010). 10.1038/nmat2835
6. H.-J. Chung, T.-i. Kim, H.-S. Kim, S. A. Wells, S. Jo, N. Ahmed, Y. H. Jung, S. M. Won, C. A. Bower, and J. A. Rogers, Adv. Funct. Mater. 21, 3029 (2011). 10.1002/adfm.201100124
7. S. W. Lee and R. Bashir, Adv. Mater. 17, 2671 (2005). 10.1002/adma.200501048
8. S. A. Stauth and B. A. Parviz, Proc. Natl. Acad. Sci. U.S.A. 103, 13922 (2006). 10.1073/pnas.0602893103
9. R. J. Knuesel and H. O. Jacobs, Proc. Natl. Acad. Sci. U.S.A. 107, 993 (2010). 10.1073/pnas.0909482107
10. Y. Zhai, L. Methew, R. Rao, D. Xu, and S. K. Banerjee, Nano Lett. 12, 5609 (2012). 10.1021/nl302735f
11. D. Shahrjerdi and S. W. Bedell, Nano Lett. 13, 315 (2013). 10.1021/nl304310x
12. J. N. Burghartz, W. Appel, H. D. Rempp, and M. Zimmermann, IEEE Trans. Electron Devices 56, 321 (2009). 10.1109/TED.2009.2010581
13. E. A. Angelopoulos, M. S. Al-Shahed, W. Appel, S. Endler, S. Ferwana, C. Harendt, M. Hassan, H. Rempp, M. Zimmermann, and J. N. Burghartz, in Solid-State Device Research Conference (ESSDERC) 2012: Proceedings of the European, Bordeaux, France, 17-21 September 2012, edited by, Y. Deval, (IMS Lab, University of Bordeaux, France), pp. 141-144.
14. R. F. Pierret, Semiconductor Device Fundamentals (Addison-Wesley, Natick, MA, 1996), Chap..
15. G. Barbottin and A. Vapaille, Instabilities in Silicon Devices (Elsevier, Amsterdam, 1989), Vol. 2, Chap..
16. S. Takahi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices 41, 2363 (1994). 10.1109/16.337450
17. C. Fink, K. G. Anil, H. Geiger, W. Hansch, F. Kaesen, J. Schulze, T. Sulima, and I. Eisele, Solid State Electron. 46, 387 (2002). 10.1016/S0038-1101(01)00119-8
18. H. S. Momose, T. Ohguro, S. Nakamura, and Y. Toyoshima, IEEE Trans. Electron Devices 49, 1597 (2002). 10.1109/TED.2002.802624
19. M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, Nat. Mater. 5, 33 (2006). 10.1038/nmat1532
20. A. Carson, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, Adv. Mater. 24, 5284 (2012). 10.1002/adma.201201386
21. J. H. Stathis and S. Zafar, Microelectron. Relab. 46, 270 (2006). 10.1016/j.microrel.2005.08.001
22. Y.-K. Choi, D. Ha, T.-J. King, and J. Bokor, Jpn. J. Appl. Phys. 42, 2073 (2003). 10.1143/JJAP.42.2073
23. Y. Kuo, Thin Film Transistors Materials and Processes (Klewer Academic, Norwell, MA, 2004), Vol. 1, Chap..
24. J. A. Rogers, M. G. Lagally, and R. G. Nuzzo, Nature (London) 477, 45 (2011). 10.1038/nature10381
25. K. Sato, M. Shirkida, T. Yamashiro, K. Asaumi, Y. Iriye, and M. Yamamoto, Sens. Actuators, A 73, 131 (1999) 10.1016/S0924-4247(98)00271-4.
26. S. Mack, M. A. Meitl, A. J. Baca, Z.-T. Zhu, and J. A. Rogers, Appl. Phys. Lett. 88, 213101 (2006). 10.1063/1.2206688
27. A. J. Baca, M. A. Meitl, H. C. Ko, S. Mack, H.-S. Kim, J. Dong, P. M. Ferreira, and J. A. Rogers, Adv. Funct. Mater. 17, 3051 (2007). 10.1002/adfm.200601161