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Volumn 27, Issue 14, 2015, Pages 2390-2399

Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends

(13) Yu, Xinge a,b Zeng, Li a Zhou, Nanjia c Guo, Peijun c Shi, Fengyuan c Buchholz, Donald B c Ma, Q d Yu, Junsheng b Dravid, Vinayak P c Chang, Robert P H c Bedzyk, Michael c Marks, Tobin J a Facchetti, Antonio a,e

a NORTHWESTERN UNIVERSITY (United States)

b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

c Northwestern University (United States)

d ARGONNE NATIONAL LABORATORY (United States)

e POLYERA CORPORATION (United States)

Author keywords

flexible materials; indium oxide; polymer blends; thin film transistors; transparent electronics

Indexed keywords

AMORPHOUS FILMS; FLEXIBLE ELECTRONICS; INDIUM; METALLIC COMPOUNDS; OXIDE FILMS; POLYMER BLENDS; SEMICONDUCTOR DOPING; THIN FILMS; TRANSISTORS;

AMORPHOUS METALS; CHANNEL LAYERS; FLEXIBLE MATERIALS; INDIUM OXIDE; TRANSPARENT ELECTRONICS; TRANSPARENT METALS; WEIGHT RATIOS;

THIN FILM TRANSISTORS;

EID: 85027926885 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201405400 Document Type: Article

Times cited : (118)

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