10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Govoreanu, B ^a   Kar, G S ^a   Chen, Y Y ^a,b   Paraschiv, V ^a   Kubicek, S ^a   Fantini, A ^a   Radu, I P ^a,b   Goux, L ^a   Clima, S ^a   Degraeve, R ^a   Jossart, N ^a   Richard, O ^a   Vandeweyer, T ^a   Seo, K ^a,b   Hendrickx, P ^a   Pourtois, G ^a   Bender, H ^a   Altimime, L ^a   Wouters, D J ^a,b   Kittl, J A ^a   Jurczak, M ^a   more..

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAP LAYERS; CELL OPERATION; DEVICE OPERATIONS; EXCELLENT PERFORMANCE; FILM CRYSTALLINITY; LOW ENERGIES; NON-VOLATILE MEMORIES; RESISTIVE ELEMENTS; SWITCHING ENERGY; SWITCHING MECHANISM; SWITCHING TIME;

ELECTRON DEVICES; HAFNIUM OXIDES;

RANDOM ACCESS STORAGE;

EID: 84863020678     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131652     Document Type: Conference Paper

References (6)

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4. Govoreanu et al, SSDM, in press, 2011.
5. Tsuchida et al, ISSCC Dig, pp. 258-259, 2010.
6. Annunziata et al IEDM Tech.Dig, pp. 97-100, 2009.